Effect of screening of the Coulomb interaction on the conductivity in the quantum Hall regime.
نویسندگان
چکیده
We study variable range hopping in the quantum Hall effect regime in the presence of a metallic gate parallel to the plane of a two-dimensional electron gas. Screening of the Coulomb interaction by the gate causes the partial “filling” of the Coulomb gap in the density of localized states. At low enough temperatures this leads to a substantial enhancement and a new temperature behavior of the hopping conductivity. As a result, the diagonal conductivity peaks become much wider. The power law dependence of the width of the peaks on the temperature changes: the corresponding exponent turns out to be twice as small as that for gateless structures. The width dependences on the current in non-ohmic regime and on the frequency for the absorption of the electromagnetic waves experience a similar modification. The experimental observation of the crossovers predicted may demonstrate the important role of the Coulomb interaction in the integer quantum Hall regime. PACS numbers: 73.40.Hm Typeset using REVTEX
منابع مشابه
Investigation of electron correlation effects in armchair silicene nanoribbons
In this study, the electronic structure of armchair silicene nanoribbons (ASiNRs) is investigated for various widths using first-principle calculations and the framework of the density functional theory. Electronic structure of ASiNRs shows a direct band gap which is decreased with increasing the nanoribbon's width, showing an oscillatory behavior. The effective Coulomb interaction between loca...
متن کاملBias-Induced Optical Absorption of Current Carrying Two-Orbital Quantum Dot with Strong Electron-Phonon Interaction (Polaron Regime)
The one photon absorption (OPA) cross section of a current carrying two-orbital quantum dot (QD) with strong electron-phonon interaction (polaron regime) is considered. Using the self-consistent non-equilibrium Hartree-Fock (HF) approximation, we determine the dependence of OPA cross section on the applied bias voltage, the strength of effective electron-electron interaction, and level spacing ...
متن کاملشبیه سازی اثر بی نظمی و میدان مغناطیسی بر ترابرد کوانتومی نانوساختارهای دو بعدی مدل شده با تقریب تنگابست
In recent years, semiconductor nanostructures have become the model systems of choice for investigation of electrical conduction on short length scales. Quantum transport is studied in a two dimensional electron gas because of the combination of a large Fermi wavelength and large mean free path. In the present work, a numerical method is implemented in order to contribute to the understanding ...
متن کاملModeling and Simulation of a Molecular Single-Electron Transistor
In this paper, to understand the concept of coupling, molecule density of states that coupled to the metal electrodes will be explained then, based on this concept, a weak and strong coupling for the molecules attached to the metal electrodes will be described. Capacitance model is used to explore the connection of addition energy with the Electron affinity and the ionization energy of the mole...
متن کاملبررسی اثر صحیح کوانتومی هال در سیستمهای دارای ناخالصی به روش تبدیل پیمانهای در حضور نقطههای کوانتومی
In this paper we study the integer quantum Hall effect (IQHE) on the systems with different types of impurities in delta and gaussian forms. The Landau energy levels in the presence of impurity split in two different levels,the extended and localized levels, emerging then the Hall step. Finally, we add a specified form of a quantum dot potential to a system with impurity, and observed that incr...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Physical review. B, Condensed matter
دوره 49 19 شماره
صفحات -
تاریخ انتشار 1994